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PJM2300NSA датащи(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

номер детали PJM2300NSA
подробное описание детали  N-Channel MOSFET
PDF  6 Pages
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производитель  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
домашняя страница  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM2300NSA датащи(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM2300NSA
N-Channel MOSFET
2 / 6
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Static Parameters
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
20
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
--
--
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
--
--
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS, ID=250µA
0.45
--
1
V
Static Drain-Source On-Resistance
Note3
RDS(ON)
VGS=4.5V, ID=3A
--
--
32
mΩ
VGS=2.5V, ID=2A
--
--
40
mΩ
VGS=1.8V, ID=2A
--
--
70
mΩ
Forward Transconductance Note3
gFS
VDS=10V, ID=6A
--
5
--
S
Dynamic Parameters
Input Capacitance
Ciss
VGS=0V, VDS=8V, f=1MHz
--
523
--
pF
Output Capacitance
Coss
--
99
--
pF
Reverse Transfer Capacitance
Crss
--
75
--
pF
Switching Parameters
Total gate charge
Qg
VGS=4.5V, VDS=10V,ID=6A
--
6.4
8.2
nC
Gate Source Charge
Qgs
--
1.8
2.3
nC
Gate Drain Charge
Qgd
--
1.3
1.9
nC
Turn-On DelayTime
tD(on)
VDS=10V, VGS=4.5V
ID=1A, RGEN=6Ω
--
10.5
21
ns
Turn-On Rise Time
tr
--
4.5
9
ns
Turn-Off DelayTime
tD(off)
--
27.5
55
ns
Turn-Off Fall Time
tf
--
4.3
8.6
ns
Electrical Characteristics (TC = 25℃)
Drain-Source Diode Characteristics
Body Diode Forward Voltage
VSD
IS=1.7A, VGS=0V
--
--
1.2
V
Note:
1.Repetitive rating : Pulse width limited by junction temperature.
2.Surface mounted on FR4 board, t≤10s.
3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
www.pingjingsemi.com
Revision:1.0 J
an-2019



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