MMBTSC945 datasheet(1/3 Pages) PJSEMI

номер детали	MMBTSC945

подробное описание детали	NPN Transistor

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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MMBTSC945

NPN Transistor

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www.pingjingsemi.com

Revision：1.0 Nov-2018

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55 to 150

℃

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 6 V, IC = 1 mA

Current Gain Group

L

H

HFE

130

200

400

-

Collector Base Cutoff Current

at VCB = 60 V

ICBO

-

100

nA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

-

100

nA

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

60

-

V

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

50

-

V

Emitter Base Breakdown Voltage

at IE = 100 μA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 100 mA, IB = 10 mA

VCE(sat)

-

0.3

V

Base Emitter Saturation Voltage

at IC = 100 mA, IB = 10 mA

VBE(sat)

-

1

V

Transition Frequency

at VCE = 6 V, IC = 10 mA, f = 30 MHz

fT

150

-

MHz

Collector Output Capacitance

at VCB = 10 V, f = 1 MHz

Cob

-

3

pF

Features

⚫

Excellent hFE Linearity

⚫

Low noise

Absolute Maximum Ratings

SOT-23

(TO-236)

Electrical Characteristics (TA=25℃)

1.Base 2.Emitter 3.Collector

Marking: CR

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