FMMT593 datasheet(2/4 Pages) PJSEMI

номер детали	FMMT593

подробное описание детали	NPN Transistor

PDF	4 Pages

Scroll/Zoom	100%

производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

домашняя страница	http://www.pingjingsemi.com/MainEn/Main.aspx

Logo

2 / 4 page

FMMT493

NPN Transistor

2 / 4

Electrical Characteristics

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 10 V, IC = 1 mA

HFE

100

300

Collector Base Cutoff Current

at VCB = 100 V

ICBO

0.1

μA

Emitter Base Cutoff Current

at VEB = 4 V

IEBO

0.1

μA

Emitter Base Breakdown Voltage

at IE = 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 500 mA, IB = 50 mA

VCE(sat)

0.3

Base Emitter Saturation Voltage

at VCE = 10 A, IC = 1 A

VBE(on)

Transition Frequency

at VCE = 10 V, IC = 50 mA, f = 100 MHz

150

MHz

Collector Base Capacitance

at VCB = 10 V, f = 1 MHz

Cob

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

120

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

100

www.pingjingsemi.com

Revision：1.0 Apr-2019

at VCE = 10 V, IC = 250 mA

at VCE = 10 V, IC = 500 mA

at VCE = 10 V, IC = 1000 mA

Collector Base Cutoff Current

at VCE = 100 V

ICES

0.1

μA

at IC = 1 A, IB = 100 mA

0.6

Base Emitter Saturation Voltage

at IC = 1 A, IB = 100 mA

VBE(sat)

1.15

FMMT593 датащи(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

FMMT593 датащи(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4

датащи скачать

ссылки URL