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PDTC143XMB датащи(PDF) 7 Page - Nexperia B.V. All rights reserved |
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PDTC143XMB датащи(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 12 page ![]() PDTC143XMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 7 June 2012 6 of 11 NXP Semiconductors PDTC143XMB NPN resistor-equipped transistor; R1 = 4.7 k Ω, R2 = 10 kΩ 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. f = 1 MHz; Tamb = 25 °C VCE = 5 V; Tamb = 25 °C Fig 8. Collector capacitance as a function of collector-base voltage; typical values Fig 9. Transition frequency as a function of collector current; typical values of built-in transistor VCB (V) 050 40 20 30 10 006aac845 1 2 3 Cc (pF) 0 006aac757 IC (mA) 10-1 102 10 1 102 103 fT (MHz) 10 |
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