BC68PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

7 of 13

NXP Semiconductors

BC68PAS series

20 V, 2 A NPN medium power transistors

7.

Characteristics

[1]

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

collector-base cut-off current

-

-

100

nA

--10

A

emitter-base cut-off current

-

-

100

nA

DC current gain

50

-

-

[1] 85

-

375

[1] 60

-

-

[1] 40

-

-

[1] 160

-

375

collector-emitter saturation

voltage

[1] --0.5

V

[1] --0.6

V

base-emitter voltage

[1] --0.7

V

[1] --1

V

transition frequency

40

170

-

MHz

collector capacitance

-

22

-

pF

Fig 7.

DC current gain as a function of collector

current; typical values

Fig 8.

Collector current as a function of

collector-emitter voltage; typical values

006aac694

200

100

300

400

0

10

1

(1)

(2)

(3)

05

4

23

1

006aac710

0.8

1.6

2.4

(A)

0.0

9

8

7

6

5

4

3

2

1