NXP Semiconductors

PMDPB38UNE

20 V dual N-channel Trench MOSFET

PMDPB38UNE

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© NXP B.V. 2012. All rights reserved

Product data sheet

26 September 2012

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

[2]

-

510

mW

[1]

-

1.2

W

total power dissipation

-

6.25

W

Source-drain diode

source current

[1]

-

1.1

A

Per device

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

ESD maximum rating

electrostatic discharge voltage HBM

[3]

-

1600

V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Measured between all pins.

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 1. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 2. Normalized continuous drain current as a

function of junction temperature