1.

Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3

(SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA115EMB.

1.2 Features and benefits

package

1.3 Applications

in digital applications

1.4 Quick reference data

PDTC115EMB

NPN resistor-equipped transistor; R1 = 100 k

Ω, R2 = 100 kΩ

Rev. 1 — 1 June 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter

voltage

open base

-

-

50

V

output current

-

-

20

mA

R1

bias resistor 1 (input)

70

100

130

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2