DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMDD3003

type is a silicon switching diode manufactured by

the epitaxial planar process, epoxy molded in a

for switching applications requiring a extremely

low leakage diode.

MARKING CODE: 03C

MAXIMUM RATINGS:

(TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

180

V

Average Rectified Current

IO

200

mA

Continuous Forward Current

IF

600

mA

Peak Repetitive Forward Current

IFRM

700

mA

Forward Surge Current, tp=1.0 µsec.

IFSM

2.0

A

Forward Surge Current, tp=1.0 sec.

IFSM

1.0

A

Power Dissipation

PD

250

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=125V

1.0

nA

IR

VR=125V, TA=150°C

3.0

µA

IR

VR=180V

10

nA

IR

VR=180V, TA=150°C

5.0

µA

BVR

IR=5.0µA

200

V

VF

IF=1.0mA

0.62

0.72

V

VF

IF=10mA

0.72

0.83

V

VF

IF=50mA

0.80

0.89

V

VF

IF=100mA

0.83

0.93

V

VF

IF=200mA

0.87

1.10

V

VF

IF=300mA

0.90

1.15

V

CT

VR=0, f=1 MHz

4.0

pF

CMDD3003

SURFACE MOUNT

LOW LEAKAGE

SWITCHING DIODE

SOD-323 CASE

Central

Semiconductor Corp.

TM

R0 (07-June 2004)