FDS360 datasheet(1/3 Pages) FS

номер детали	FDS360

подробное описание детали	Monolithic Dual Switching Diode Common Anode

PDF	3 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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1 / 3 page

2016. 1. 28

1/3

SEMICONDUCTOR

TECHNICAL DATA

FDS360

Revision No : 0

FDS360 = A3

Monolithic Dual Switching Diode Common Anode

3

1

CATHODE

2

CATHODE

Device

Package

Shipping

FDS360

SOT-523

3000 Tape & Reel

ORDERING INFORMATION

SOT-523

1

2

3

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

V

e

g

a

t

l

o

V

e

s

r

e

v

e

R

80

Vdc

I

t

n

e

r

u

C

d

r

a

w

r

o

F

200

mAdc

Peak Forward Surge Current

IFM(surge)

2

Adc

THERMAL CHARACTERISTICS

DEVICE MARKING

ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Ma x

Unit

OFF CHARACTERISTICS

V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

e

s

r

e

v

e

R

(BR)

80

–

Vdc

(I (BR) = 100

µAdc)

I

t

n

e

r

u

C

e

g

a

k

a

e

L

e

g

a

t

l

o

V

e

s

r

e

v

e

R

µAdc

(V R = 80 Vdc)

–

0.5

C

e

c

n

a

t

i

c

a

p

a

C

e

d

o

i

D

–

4.0

pF

(V R = 0, f = 1.0 MHz)

V

e

g

a

t

l

o

V

d

r

a

w

r

o

F

mVdc

(I F = 1.0 mAdc)

–

750

(I F = 10 mAdc)

–

900

(I F = 100 mAdc)

–

1200

t

e

m

i

T

y

r

e

v

o

c

e

R

e

s

r

e

v

e

R

rr

–

4.0

ns

(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc) (Figure 1) RL= 100Ω

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

a

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

x

Unit

Total Device Dissipation FR– 4 Board, (1)

PD

150

mW

TA = 25°C

2

.

1

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

833

°C/W

P

n

o

i

t

a

p

i

s

i

D

e

c

i

v

e

D

l

a

t

o

T

D

200

mW

FR-4 Board(2), Ta= 25°C

6

.

1

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

600

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

(V R = 30 Vdc)

–

0.1

We declare that the material of product compliance with

RoHS requirements.

FEATURES

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производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BAW56LT1	82Kb / 4P	Monolithic Dual Switching Diode Common Anode
Leshan Radio Company	BAW56LT1	54Kb / 2P	Monolithic Dual Switching Diode Common Anode
Leshan Radio Company	LBAW56LT1	74Kb / 3P	Monolithic Dual Switching Diode Common Anode
ON Semiconductor	BAW56WT1G	124Kb / 4P	Dual Switching Diode, Common Anode October, 2010 -- Rev. 6
ON Semiconductor	SBAW56LT1G	121Kb / 4P	Dual Switching Diode Common Anode September, 2012 ??Rev. 8
Leshan Radio Company	L1SS360TT1G	131Kb / 3P	Monolithic Dual Switching Diode Common Anode
Yea Shin Technology Co....	BAW56	656Kb / 3P	Monolithic Dual Switching Diode Common Anode
Yea Shin Technology Co....	BAW56-A	672Kb / 3P	Monolithic Dual Switching Diode Common Anode
ON Semiconductor	BAW56L	94Kb / 4P	Dual Switching Diode Common Anode October, 2016 ??Rev. 10
AiT Semiconductor Inc.	BAW56L	540Kb / 6P	SWITCHING DIODES MONOLITHIC DUAL COMMON ANODE REV1.1

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