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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L433CB датащи(PDF) 147 Page - STMicroelectronics |
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STM32L433CB датащи(HTML) 147 Page - STMicroelectronics |
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147 / 225 page  DS11449 Rev 5 147/225 STM32L433xx Electrical characteristics 193 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 28 for standard I/Os, and in Figure 28 for 5 V tolerant I/Os. Figure 28. I/O input characteristics Output driving current The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ± 20 mA (with a relaxed VOL/VOH). 1. Refer to Figure 28: I/O input characteristics. 2. Tested in production. 3. Guaranteed by design. 4. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula: ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max). 5. All FT_xx GPIOs except FT_u and PC3 I/Os. 6. Max(VDDXXX) is the maximum value of all the I/O supplies. 7. To sustain a voltage higher than Min(VDD, VDDA, VDDUSB, VLCD) +0.3 V, the internal Pull-up and Pull-Down resistors must be disabled. 8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). MSv37613V1 Teste d in production CMOS requirement Vih min = 0 .7xV DDIO x Based on simulati on Vi h min = 0. 61xV DDIOx +0.05 for 1.08<V DDIOx <1.62 or 0.49xV DDIOx +0.2 6 for VDDI Ox>1 .62 Based on simu lation Vil m ax =0.43xV DDIOx -0.1 for 1.08 <VDDIOx <1.62 or 0.39xV DDIOx -0.06 for VDDIO x>1.62 Tested in produ ction CMOS requirement Vil ma x = 0.3xVdd TTL requirement Vih min = 2V TTL requirement Vil max = 0.8V |
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