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STM32L433CB датащи(PDF) 140 Page - STMicroelectronics |
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STM32L433CB датащи(HTML) 140 Page - STMicroelectronics |
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140 / 225 page ![]() Electrical characteristics STM32L433xx 140/225 DS11449 Rev 5 Figure 27. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- +/-0.15(2) -ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- +/-0.25(2) -ns 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 60. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv40989V1 -6 -4 -2 0 2 4 6 -50 -30 -10 10 30 50 70 90 110 130 Avg min max °C % Table 61. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start- up time -- 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption -- 110 180 nA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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