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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L433CB датащи(PDF) 132 Page - STMicroelectronics |
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STM32L433CB датащи(HTML) 132 Page - STMicroelectronics |
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132 / 225 page  Electrical characteristics STM32L433xx 132/225 DS11449 Rev 5 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 23. Typical application with an 8 MHz crystal 1. REXT value depends on the crystal characteristics. Low-speed external clock generated from a crystal resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator oscillator. All the information given in this paragraph are based on design simulation results obtained with typical external components specified in Table 57. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). MS19876V1 (1) OSC_IN OSC_OUT RF Bias controlled gain fHSE REXT 8 MHz resonator Resonator with integrated capacitors CL1 CL2 Table 57. LSE oscillator characteristics (fLSE = 32.768 kHz)(1) Symbol Parameter Conditions(2) Min Typ Max Unit IDD(LSE) LSE current consumption LSEDRV[1:0] = 00 Low drive capability -250 - nA LSEDRV[1:0] = 01 Medium low drive capability -315 - LSEDRV[1:0] = 10 Medium high drive capability -500 - LSEDRV[1:0] = 11 High drive capability -630 - Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 00 Low drive capability -- 0.5 µA/V LSEDRV[1:0] = 01 Medium low drive capability - - 0.75 LSEDRV[1:0] = 10 Medium high drive capability -- 1.7 LSEDRV[1:0] = 11 High drive capability -- 2.7 tSU(LSE)(3) Startup time VDD is stabilized - 2 - s |
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