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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32MP157C датащи(PDF) 166 Page - STMicroelectronics |
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STM32MP157C датащи(HTML) 166 Page - STMicroelectronics |
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166 / 258 page  Electrical characteristics STM32MP157C 166/258 DS12505 Rev 2 6.3.17 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 52: I/O static characteristics are derived from tests performed under the conditions summarized in Table 13: General operating conditions. All I/Os are CMOS and TTL compliant. Table 51. I/O current injection susceptibility(1) Symbol Description Negative injection Positive injection Unit IINJ ANA0, ANA1, DSI_D0_P, DSI_D0_N, DSI_CK_P, DSI_CK_N, DSI_D1_P, DSI_D1_N, PA4, PA5 00 mA PG2, PG3, PG4, PH2 0 N/A All other FTxx I/Os 5 N/A 1. Guaranteed by characterization . Table 52. I/O static characteristics Symbol Parameter Condition Min Typ Max Unit VIL(1) I/O input low level voltage 1.71 V < VDD < 2.7 V - - 0.35 × VDD V 2.7 V < VDD < 3.6 V - - 0.3 × VDD 1.71 V < VDD < 3.6 V - - 0.45 × VDD + 0.35 VIH(1) I/O input high level voltage 1.71 V < VDD < 3.6 V 0.7 × VDD -- V VHYS(1) TT_xx, FT_xxx and NRST I/O input hysteresis 1.71 V < VDD < 3.6 V - 0.1 × VDD -mV Ileak FT_xx input leakage current(1) 0 < VIN ≤ Max(VDD)(6) -- 250 nA Max(VDD) < VIN ≤ 5.5 V (6)(2)(3) - - 3500 FT_u, IO 0 < VIN ≤ Max(VDD)(6) -- 500 Max(VDD) < VIN ≤ 5.5 V (6)(3) - - 5000(4) TT_xx input leakage current 0 < VIN ≤ Max(VDD) (6) -- 100 RPU Weak pull-up equivalent resistor(5) VIN=VSS 25 40 55 kΩ RPD Weak pull-down equivalent resistor(5) VIN=VDD(6) 25 40 55 CIO I/O pin capacitance - - 5 - pF 1. Guaranteed by design. 2. All FT_xx IO except FT_uf, FT_u. 3. VIN must be less than Max(VDD) + 3.6 V. 4. To sustain a voltage higher than MIN(VDD, VDDA, VDD3V3_USBxxx) +0.3 V, the internal pull-up and pull-down resistors must be disabled. |
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