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STM32MP157C датащи(PDF) 165 Page - STMicroelectronics |
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STM32MP157C датащи(HTML) 165 Page - STMicroelectronics |
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165 / 258 page ![]() DS12505 Rev 2 165/258 STM32MP157C Electrical characteristics 238 Static latchup Two complementary static tests are required on three parts to assess the latchup performance: • A supply overvoltage is applied to each power supply pin • A current injection is applied to each input, output and configurable I/O pin These tests are compliant with JESD78 IC latchup standard. 6.3.16 I/O current injection characteristics As a general rule, a current injection to the I/O pins, due to external voltage below VSS or above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal product operation. However, in order to give an indication of the robustness of the device in cases when an abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during the device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency deviation). The following tables are the compilation of the SIC1/SIC2 and functional ESD results. Negative induced A negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. Table 49. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C conforming to ANSI/ESDA/JEDEC JS-001 All 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C conforming to ANSI/ESDA/JEDEC JS-002 All C1 250 1. Guaranteed by characterization results. Table 50. Electrical sensitivities Symbol Parameter Conditions Class LU Static latchup class TA = +25 °C conforming to JESD78 II level A |
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