SEMICONDUCTOR

TECHNICAL DATA

UMC5N

2012. 08. 30

1/4

Revision No : 0

Device

Marking

Shipping

ORDERING INFORMATION

EPITAXIAL PLANAR

NPN+PNP Dual Digital Transistor

We declare that the material of product

compliance with RoHS requirements.

SC−88A/SOT−353

Features

Including two devices in USV.

(Ultra Supermini type with 5 leads.)

With Built-in bias resistors.

Reduce a quantity of parts and manufacturing process.

Simplify circuit design.

EQUIVALENT CIRCUIT (TOP VIEW)

R1

R2

COMMON

OUT

1

IN

R1

R2

COMMON

OUT

IN

Q

R1=47㏀

R2=47㏀

2

Q

R1=4.7㏀

R2=10㏀

EQUIVALENT CIRCUIT

UMC5N

C5

3000 Tape & Reel

5 )

Parameter

Symbol

Value

Unit

Supply voltage

50

V

Input voltage

-10~+40

V

30

Output current

100

mA

Power dissipation

150

mW

Thermal Resistance From Junction To Ambient

833

℃/W

Junction temperature

150

℃

Storage temperature

-55~+150

℃

5

℃)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

0.5

μA

Input voltage

3

V

Output voltage

0.3

V

Input current

0.18

mA

Output current

0.5

μA

DC current gain

68

Input resistance

32.9

47

61.1

k

Ω

Resistance ratio

0.8

1

1.2

Transition frequency

250

MHz