FDS99S datasheet(1/3 Pages) FS

номер детали	FDS99S

подробное описание детали	Dual Series Switching Diode

PDF	3 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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1 / 3 page

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3

2

Dual Series Switching Diode

SOT–23

3

CAHODE/ANODE

1

ANODE

2

CATHODE

MAXIMUM RATINGS (EACH DIODE)

V

l

o

b

m

y

S

g

n

i

t

a

R

alue

Unit

V

e

g

a

t

l

o

V

e

s

r

e

v

e

R

70

Vdc

I

t

n

e

r

u

C

d

r

a

w

r

o

F

215

mAdc

I

t

n

e

r

u

C

e

g

r

u

S

d

r

a

w

r

o

F

k

a

e

P

FM(surge)

500

mAdc

V

e

g

a

t

l

o

V

e

s

r

e

v

e

R

k

a

e

P

e

v

i

t

i

t

e

p

e

R

RRM

70

V

Average Rectified Forward Current (1)

I F(AV)

715

mA

(averaged over any 20 ms period)

I

t

n

e

r

u

C

d

r

a

w

r

o

F

k

a

e

P

e

v

i

t

i

t

e

p

e

R

FRM

450

mA

I

t

n

e

r

u

C

d

r

a

w

r

o

F

k

a

e

P

e

v

i

t

i

t

e

p

e

R

–

n

o

N

FSM

A

t = 1.0

µ s

2.0

t = 1.0 ms

1.0

t = 1.0 S

0.5

THERMAL CHARACTERISTICS

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Max

Unit

P

n

o

i

t

a

p

i

s

i

D

e

c

i

v

e

D

l

a

t

o

T

D

225

mW

FR–5 Board, (1) T A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance Junction to Ambient

R θJA

556

°C/W

P

n

o

i

t

a

p

i

s

i

D

e

c

i

v

e

D

l

a

t

o

T

D

300

mW

Alumina Substrate, (2) T A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance Junction to Ambient

R θJA

417

°C/W

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

d

n

a

n

o

i

t

c

n

u

J

J , T stg

–65 to +150

°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)

n

i

M

l

o

b

m

y

S

c

i

t

s

i

r

e

t

c

a

r

a

h

C

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage(I (BR) = 100

µA)

V (BR)

70

—

Vdc

Reverse Voltage Leakage Current (V R = 70 Vdc)

I R

—

2.5

µAdc

(V R = 25 Vdc, T J

0

3

–

)

C

°

0

5

1

=

(V R = 70 Vdc, T J

0

5

–

)

C

°

0

5

1

=

Diode Capacitance

C D

—

1.5

pF

(V R = 0, f = 1.0 MHz)

Forward Voltage (I F

V

)

c

d

A

m

0

.

1

=

F

––

715

mVdc

(I F

5

8

—

)

c

d

A

m

0

1

=

(I F

0

1

–

)

c

d

A

m

0

5

=

(I F

0

5

2

1

–

)

c

d

A

m

0

5

1

=

Reverse Recovery Time

(I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100

Ω ) (Figure 1)

t rr

—

6.0

ns

Forward Recovery Voltage

(I F = 10 mA, t r = 20 ns)

V FR

—

1.75

V

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

.

FDS99S

FDS99S3

A7

3000 Tape & Reel

10000 Tape & Reel

Device

Marking

Shipping

DEVICE MARKING ORDERING INFORMATION

A7

• We declare that the material of product

compliance with RoHS requirements.

FDS99S

2008. 10. 30

1/3

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 0

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