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WNB325C5APPS12 датащи(PDF) 2 Page - WeEn Semiconductors |
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WNB325C5APPS12 датащи(HTML) 2 Page - WeEn Semiconductors |
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2 / 7 page ![]() WeEn Semiconductors WNB325C5APPS12 Hyperfast power diode - Bare die WNB325C5APPS12 Product data sheet All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 14 December 2018 2 / 7 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM* repetitive peak reverse voltage - 1200 V VRWM* crest working reverse voltage - 1200 V VR* reverse voltage DC - 1200 V IF(AV)** average forward current δ = 0.5; square-wave pulse - 100 A IFRM** repetitive peak forward current δ = 0.5; tp = 25 μs; square-wave pulse - 200 A IFSM** non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse - 900 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse - 1000 A Tstg** storage temperature -65 175 °C Tj** junction temperature 175 °C |
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