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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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WNB111C5APTS датащи(PDF) 1 Page - WeEn Semiconductors |
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WNB111C5APTS датащи(HTML) 1 Page - WeEn Semiconductors |
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1 / 7 page  1. General description Hyperfast power diode bare die 2. Features and benefits • Fast switching • Low leakage current • Low forward voltage drop • Soft recovery characteristic • Bare die 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRRM repetitive peak reverse voltage - - 600 V IF(AV) average forward current δ = 0.5; square-wave pulse - - 15 A Static characteristics VF forward voltage IF = 15 A; Tj = 150 °C - 1.4 2 V Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C - 13 18 ns 4. Ordering information Table 2. Ordering information Package Type number Name Description Version WNB111C5APTS Wafer Bare die on wafer Die WNB111C5APTS Hyperfast power diode - Bare die 29 October 2017 Product data sheet * ** ** ** |
Аналогичный номер детали - WNB111C5APTS |
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Аналогичное описание - WNB111C5APTS |
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