2SC5509 datasheet(2/15 Pages) NEC

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Data Sheet PU10009EJ01V0DS

2SC5509

THERMAL RESISTANCE

Parameter

Symbol

Ratings

Unit

Junction to Case Resistance

Rth j-c

°C/W

Junction to Ambient Resistance

Rth j-a

650

°C/W

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−−

600

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

−−

600

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 10 mA

100

−

RF Characteristics

Gain Bandwidth Product

VCE = 3 V, IC = 90 mA, f = 2 GHz

−

GHz

Insertion Power Gain

S21e2 VCE = 2 V, IC = 50 mA, f = 2 GHz

−

Noise Figure

VCE = 2 , IC = 10 mA, f = 2 Hz,

ZS = Zopt

–1.2

1.7

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

−

0.5

0.75

Maximum Available Power Gain

MAG

Note 3

VCE = 2 V, IC = 50 mA, f = 2 GHz

−

Maximum Stable Power Gain

MSG

Note 4

VCE = 2 V, IC = 50 mA, f = 2 GHz

−

Gain 1 dB Compression Output Power

PO (1 dB)

VCE = 2 V, IC = 70 mA

Note 5, f = 2 GHz

−

dBm

3rd Order Intermodulation Distortion

Output Intercept Point

OIP3

VCE = 2 V, IC = 70 mA

Note 5, f = 2 GHz

−

dBm

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MAG =

4. MSG =

5. Collector current when PO (1 dB) is output

hFE CLASSIFICATION

Rank

Marking

T80

hFE Value

50 to 100

(K –

√√√√ (K2 – 1) )

S21

S12

S21

S12

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