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FC9931 датащи(PDF) 2 Page - First Silicon Co., Ltd |
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FC9931 датащи(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 6 page ![]() FC9931 2012. 10. 31 2/6 Revision No : 0 Absolute Maximum Ratings VIN to GND ------------------------------------------------------------------- -0.5V to +470V VDDto GND -0.3V to +13,5V CS1, CS2, PWM_D, GATE, RT to GND -0.3V to (VDD + 0.3V) Operating Temperature Range -40°C to +85°C Junction Temperature Storage Temperature Range -65°C to +150°C Continuous Power Dissipation (Ta=+25°C) (Note 1) 16-Pin SO (derate 7.5mW/°C above +25°C) 8-Pin DIP (derate 9mW/°C above +25°C) 8-Pin SO (derate 6.3mW/°C above +25°C) Stresses beyond those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note1: Also limited by package power dissipation limit, whichever is lower. Electrical Characteristics (cont.) (The * denotes the specifications which apply over the full operating juction temperature range of -40°C < T < +85°C, otherwise the specifications are at T = 25°C, VIN= 12V, unless otherwise noted) Symbol Description Min Typ Max Units Conditions Input VINDC Input DC supply voltage range* 8.0 - 450 V DC input voltage IINSD Shut-Down mode supply current* - 0.5 1 mA Pin PWM_D to GND Internal Regulator VDD Internally regulated voltage 7.12 7.5 7.88 V VIN = 8V, IDD(ext)=0, GATE = 500pF, RT = 226KΩ ΔVDD,line Line regulation of VDD 0 - 1.0 V VIN = 8 - 450V, IDD(ext) = 0, GATE = 500pF, RT = 226kΩ UVLO VDD undervoltage lockout threshold 6.45 6.7 6.95 V VIN rising ΔUVLO VDD undervoltage lockout hysteresis - 500 - mV --- PWM Dimming VPWMD(lo) PWM_D input low voltage 1.0 V VIN = 8-450V VPWMD(hi) PWM_D input high voltage 2.4 V VIN = 8-450V RPWMD PWM_D pull-down resistance 50 100 150 kΩ VPWMD = 5V GATE VGATE(hi) GATE high output voltage* VDD- 0.3 - VDD V IGATE = -10 mA, VDD = 7.5V, VIN open VGATE(lo) GATE low output voltage 0 - 0.3 V IGATE = 10 mA VDD = 7.5V, VIN open TRISE GATE output rise time - 30 50 ns CGATE = 500рF, VDD = 7.5V, VIN open TFALL GATE output fall time - 30 50 ns CGATE = 500pF, VDD = 7.5V, VIN open TDELAY Delay from CS trip to GATE - 150 300 ns VCS1, VCS2 = -100mV TBLANK Blanking delay 150 215 280 ns VCS1, VCS2 = -100mV Oscillator FOSC Oscillator frequency 80 100 120 kHz RT = 226 kΩ Comparators TOFFSET1 TOFFSET2 Comparator input offset voltage* -15 - 15 mV --- ------------------------------------------------------------------- ------------------------------- ------------------------------- +125°C ------------------------------- ------------------------------- 750mW 900mW 630mW ------------------------------- ------------------------------- ------------------------------- |
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