APM2007 datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.1 - Nov., 2002

www.anpec.com.tw

APM2007

Symbol

Parameter

Rating

Unit

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

A=25°C

Maximum Power Dissipation

A=100°C

Maximum Junction Temperature

150

°C

STG

Storage Temperature Range

-55 to 150

°C

RθjA

Thermal Resistance – Junction to Ambient

°C/W

* Surface Mounted on FR4 Board, t

≤ 10 sec.

APM 2007N

Sym bol

Param eter

Test Condition

Min.

Typ.

Max.

Unit

Static

DSS

Drain-S ource Breakdown

Voltage

GS =0V , IDS= 250 µ A

DSS

Zero G ate Voltage Drain

Current

DS = 1 8 V , V GS=0 V

µA

GS(th)

Gate Threshold Voltage

DS =V GS , IDS= 250 µ A

11.5

GSS

Gate Leakage Current

GS =

±16V , V

DS=0 V

±100

GS = 1 0 V , IDS=30 A

67.5

GS =4.5 V , IDS=20 A

89.5

DS(ON)

Drain-S ource On-state

Resistance

GS =2.5 V , IDS=15 A

Ω

Diode Forward Voltage

SD =4 A , V GS=0 V

0.7

1.3

Dynam ic

Total G ate Charge

Gate-Source Charge

5.2

Gate-Drain Charge

DS = 1 0 V , IDS= 5 A

GS =4.5 V ,

7.6

d(ON)

Turn-on Delay Time

Turn-on Rise Tim e

d(OFF)

Turn-off Delay Tim e

Turn-off Fall Time

DD = 1 0 V , IDS=1A ,

GEN =4.5 V , R G=0 .2 Ω

iss

Input Capacitance

2293

oss

Output Capacitance

570

rss

Reverse Transfer Capacitance

GS =0V

DS =15 V

Frequency=1.0MHz

390

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (Cont.) (T

A = 25°C unless otherwise noted)

Notes

a : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

b : Guaranteed by design, not subject to production testing

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