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AS29CF040-55CCIN датащи(PDF) 2 Page - Alliance Semiconductor Corporation

номер детали AS29CF040-55CCIN
подробное описание детали  512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector - Parallel Flash Memory
PDF  27 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS29CF040-55CCIN датащи(HTML) 2 Page - Alliance Semiconductor Corporation

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512K X 8 Bit CMOS 5.0 Volt-only
Features
5.0V ± 10% for read and write operations
Access times:
- 55 (max.)
Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1 µA typical CMOS standby
Flexible sector architecture
-
8 uniform sectors of 64 Kbyte each
-
Any combination of sectors can be erased
-
Supports full chip erase
-
Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within that
sector
Industrial operating temperature range: -40°C~+85°C
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors
and verify the erased sectors
- Embedded Program algorithm automatically writes and
verifies bytes at specified addresses
Minimum 100,000 program/erase cycles per sector
20-year data retention at 125°C
- Reliable operation for the life of the system
Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
-
Superior inadvertent write protection
Data Polling and toggle bits
-
Provides a software method of detecting completion of
program or erase operations
Erase Suspend/Erase Resume
-
Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
Package options
-
32-pin PLCC
-
All Pb-free (Lead-free) products are RoHS2.0 compliant
General Description
The AS29CF040-55CCIN is a 5.0 volt-only Flash memory
organized as 524,288 bytes of 8 bits each. The 512
Kbytes of data are further divided into eight sectors of 64
Kbytes each for flexible sector erase capability. The 8 bits
of data appear on I/O0 - I/O7 while the addresses are
input on A0 to A18. The AS29CF040-55CCIN is
offered in 32-pin PLCC packages. This device is
designed to be programmed in-system with the
standard system 5.0volt VCC supply. Additional 12.0
volt VPP is not required for in-system write or erase
operations. However, the AS29CF040-55CCIN can also
be programmed in standard EPROM programmers.
The AS29CF040-55CCIN has a second toggle bit, I/O2,
to indicate whether the addressed sector is being selected
for erase, and also offers the ability to program in the Erase
Suspend mode. The standard AS29CF040-55CCIN offers
access times of 55 ns, allowing high-speed
microprocessors to operate without wait states. To eliminate
bus contention the device has separate
chip enable (
CE ), write enable ( WE ) and output enable
(
OE ) controls.
The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated
and regulated voltages are provided for the program and
erase operations.
The AS29CF040-55CCIN is entirely software command set
compatible with the JEDEC single-power-supply Flash
standard. Commands are written to the command
register using standard microprocessor write timings.
Register contents serve as input to an internal state-
machine that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading from
other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin.
The host system can detect whether a program or erase
operation is complete by reading the I/O7 (
Data Polling) and
I/O6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The AS29CF040-55CCIN is fully
erased when shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the sectors
of memory. This can be achieved via programming
equipment.
The Erase Suspend feature enables the user to put erase on
hold for any period of time to read data from, or program
data to, any other sector that is not selected for erasure.
True background erase can thus be achieved.
Power consumption is greatly reduced when the device is
placed in the standby mode.
AS29CF040-55CCIN
Confidential
- 2 of 27 -
Rev.1.0. July 2019



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