DWX datasheet(1/29 Pages) FS

номер детали	DWX

подробное описание детали	Dual Bias Resistor Transistors

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производитель	FS [First Silicon Co., Ltd]

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SEMICONDUCTOR

TECHNICAL DATA

DWX Series

Revision No : 0

1

3

2

SOT-363/SC-88

6

4

5

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

DWX Series , two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb-Free Package is available

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias Resistor Network

1

3

2

6

4

5

Q1

Q2

R1

R2

R1

R2

XX

MARKING DIAGRAM

3

1

2

6

4

5

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

xx = Device Marking

(See Page 2)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2, – minus sign for Q 1(PNP) omitted)

t

i

n

U

e

u

l

a

V

l

o

b

m

y

S

g

n

i

t

a

R

Collector-Base Voltage

V CBO

50

Vdc

Collector-Emitter Voltage

V CEO

50

Vdc

I

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

PD

187 (Note 1.)

mW

TA = 25°C

Derate above 25°C

mW/°C

Thermal Resistance –

R θ

JA

670 (Note 1.)

°C/W

)

.

2

e

t

o

N

(

0

9

4

t

n

e

i

b

m

A

-

o

t

-

n

o

i

t

c

n

u

J

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

P D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

mW

mW/°C

Thermal Resistance –

Junction-to-Ambient

R θJA

493 (Note 1.)

325 (Note 2.)

°C/W

Thermal Resistance –

Junction-to-Lead

R θJL

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T J , T stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Аналогичный номер детали - DWX

производитель	номер детали	датащи	подробное описание детали
DOMINANT Semiconductors	DWX	1Mb / 13P	Power DomiLED
	DWX-HKG	1Mb / 13P	High brightness surface mount LED using thin film technology
	DWX-HKG	1Mb / 14P	Power DomiLED
	DWX-HKG	1Mb / 14P	Power DomiLED
	DWX-LJG	997Kb / 14P	High brightness surface mount LED

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Аналогичное описание - DWX

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Motorola, Inc	MUN5311DW1T1	308Kb / 16P	Dual Bias Resistor Transistors
Leshan Radio Company	MUN5211DW1T1	199Kb / 8P	Dual Bias Resistor Transistors
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Leshan Radio Company	LMUN5114DW1T1G	352Kb / 12P	Dual Bias Resistor Transistors
	LMUN5132DW1T1G	352Kb / 12P	Dual Bias Resistor Transistors
	LMUN5311DW1T1G	275Kb / 29P	Dual Bias Resistor Transistors

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