NPN SILICON EPITAXIAL TRANSISTOR

CSC2120

TO-92

BCE

Audio Power Amplifier Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified )

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

35

V

Collector -Emitter Voltage

VCEO

30

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

800

mA

Emitter Current

IE

800

mA

Collector Power Dissipation

PC

600

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=35V, IE=0

-

-

100

nA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

100

nA

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

30

-

-

V

DC Current Gain

hFE*(1)

IC=100mA, VCE=1V

100

-

320

hFE*(2)

IC=700mA, VCE=1V

35

-

-

Collector Emitter Saturation Voltage

VCE(Sat) * IC=500mA, IB=20mA

-

-

0.5

V

Base Emitter Voltage

VBE(on)

IC=10mA, VCE=1V

0.5

-

0.8

V

Dynamic Characteristics

Collector Output Capacitance

Cob

VCB=10V, IE=0,

-

13

-

pF

f=1MHz

Transition Frequency

ft

VCE=5V,IC=10mA,

-

120

-

MHz

*(1)hFE CLASSIFICATION

0 : 100 - 200,

Y : 160 - 320,

*Pulse Test : Pulse Width =300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company