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NexFlash Technologies, Inc.
7
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
Output remaining 264 bytes
(2112 bits) of sector data
Output (Rewrite )1st byte of sector
with C9H Tag/Sync bite
Output two bytes of zeros (00 00H)
Assert CLK low for
tRESET
to invoke Erase/Write Operation
and then standby operation
Output one clock to wake
device from stand-by
Call Read Sector Routine to
check Ready/Busy and Tag
Start Sector Erase/Write Routine
Return (1)
Yes
No*
Device
Ready and Sector
Tag valid
*Set Flag and process
accordingly upon return
Output Command Sequence:
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-1FF-7FF)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
-Auxilary Address A15-A12
0H for main array
-Four reserved bytes R31-R0
(00 00 00 00H)
Figure 8. Sector Erase/Write Operation Flow Chart
Input first byte of data
(Tag/Sync) from sector
*Set Flag and process
accordingly upon return
Return
Yes
No*
No*
Yes*
Ready?
(99 99H)
Input remaining 264 bytes of
sector data (2112 bits)
Return to write routine?
Assert CLK low for
tRESET to
reset device and invoke standby
Valid Sector?
(C9H)
No
Start Sector Read Routine
Output clock (low to high) to
wake device from standby
Input Ready/Busy Status S15-S0.
Note tRP delay time is
required during status read
(See AC Timing and Figure 10)
Output Command Sequence:
-Read command C3-C0 (0001B)
-Main Sector Address A1-A0
(000-1FF-7FF)
-Device Address DA3-DA0
(per state of A3, A2, A1, A0 pins)
-Auxilary Address A15-A12
0H for main array
5H device information sector
-Four reserved bytes R31-R0
(00 00 00 00H)
Yes
Figure 7. Sector Read Operation Flow Chart
Note:
1. To ensure higher data integrity verify each sector write with a sector read. See High Data Integrity Applications on Page 4.
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