BAV99 datasheet(1/2 Pages) FS

номер детали	BAV99

подробное описание детали	Dual Series Switching Diode

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производитель	FS [First Silicon Co., Ltd]

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Dual Series Switching Diode

BAV99

2018. 11. 14

1/2

SEMICONDUCTOR

TECHNICAL DATA

Revision No : 1

Chip made in Japan

Ultra high speed switching application

Low Forward Voltage

Fast Reverse Rocovery Time

Small Total Capacitance

Case:SOT-23 Plastic Package

Weight:Approx. 0.008g

Packaging:

3K per 7"reel(8mm tape)

15K inner box, 150K out box

Marking: A7

Tamb=25

, unless otherwise specified

Tamb=25

, unless otherwise specified

nS

Forward Voltage

Characteristic

Maximum Peak Reverse Voltage

Reverse Voltage

V

Reverse Recovery Time

trr

IF=10mA

-

1.6

pF

Total Capcitance

CT

VR=0, f=1MHZ

-

0.9

Reverse Current

IR

VR=80V

-

VF(2)

IF=10mA

-

-55~150

uA

VF(3)

IF=150mA

-

Power Dissipation

(Mounted On 99.5% Alumina, 10*8*0.6mm)

Storage Tempearture Range

Tstg

Unit

Max.

Typ.

Min.

Test Condition

Symbol

Junction Temperature

Tj

150

0.72

VF(1)

IF=1mA

-

0.60

Electrical Characteristics

SOT-23

Maximum Ratings & Thermal Characteristics

85

VRM

Millimeters

V

B

1.30±0.15

C

1.05±0.15

D

0.40±0.10

E

2.50+0.10/-0.25

G

1.90±0.10

H

0.95

J

0.12+0.0/-0.1

Characteristic

Unit

Symbol

Max Ratings

2

VR

Continuous Forward Current

Surge Current (1uS)

80

IF

250

IFSM

PD

300

N

1.0±0.10

Features

Mechanical Data

K

0.00~0.10

L

Dim

A

2.90±0.15

0.55

M

0.20mm MIN

L

E

B

L

M

3

1

2

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