ACTT10-800CT datasheet(2/13 Pages) WEEN

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WeEn Semiconductors

ACTT10-800CT

AC Thyristor Triac power switch

ACTT10-800CT

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Product data sheet

5 September 2018

2 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VD = 12 V; IT = 100 mA; LD+ G+;

Tj = 25 °C; Fig. 8

VD = 12 V; IT = 100 mA; LD+ G-;

Tj = 25 °C; Fig. 8

IGT

gate trigger current

VD = 12 V; IT = 100 mA; LD- G-;

Tj = 25 °C; Fig. 8

holding current

VD = 12 V; Tj = 25 °C; Fig. 10

on-state voltage

IT = 14.1 A; Tj = 25 °C; Fig. 11

1.3

1.5

VCL

clamping voltage

ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C

850

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM = 536 V; Tj = 150 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

1000

V/µs

dIcom/dt

rate of change of

commutating current

VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;

dVcom/dt = 20 V/µs; (snubberless

condition); gate open circuit

A/ms

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

common

load

gate

mounting base; load

1 2

TO-220AB (SOT78)

003aaf296

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

ACTT10-800CT

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

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