2SA1302 datasheet(1/3 Pages) ISC

номер детали	2SA1302

подробное описание детали	isc Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor

2SA1302

DESCRIPTION

·

High Current Capability

·

High Power Dissipation

·

High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -200V(Min)

·

Complement to Type 2SC3281

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Power amplifier applications

·

Recommend for 100W high fidelity audio frequency amplifier

output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

IB

Base Current-Continuous

-1.5

A

PC

Collector Power Dissipation

@ TC=25℃

150

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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