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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SA1006 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1006 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1006 DESCRIPTION · Good Linearity of hFE · High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180Vdc (Min) · Wide Area of Safe Operation · Complement to Type 2SC2336 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Audio frequency power amplifier · High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A PC Collector Power Dissipation@ Ta=25℃ 1.5 W Total Power Dissipation@ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SA1006 |
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Аналогичное описание - 2SA1006 |
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