GROUP A

SUBGROUP

5

2

PRELIMINARY Rev. A 6/00

ABSOLUTE MAXIMUM RAT-

INGS

V+ High Voltage Supply. . . . . . . 200V

Peak Output Current. . . . . . . 30A

Thermal Resistance . . . . . . 1.0°C/W

(Output Switches) (Junction to Case)

Storage Temperature Range

Lead Temperature Range(10 Seconds)

Case Operating Temperature

MSK 4322

MSK 4322H

Junction Temperature

1

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.

3 Military grade devices ("H" suffix) shall be 100% tested to subgroups 1, 2, 3 and 4.

4 Subgroups 5 and 6 testing available upon request.

5 Subgroup

1, 4 TA =TC =+25°C

2, 5 TA =TC =+125°C

3, 6 TA =TC =-55°C

ELECTRICAL SPECIFICATIONS

Parameters

MSK 4322H

Min. Typ. Max.

V+ = 200V

V+ = 160V

V+ = 200V

-

-

-

-

-

-

-

-

-

-

-

-

-

2.2

-

-

-

-

-

-

-

-

-

-

300

2.0

5.0

TBD

2.0

TBD

TBD

600

750

3.0

TBD

6

12

TBD

-

0.8

TBD

TBD

45

350

TBD

TBD

45

350

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2.2

-

-

-

-

-

-

-

-

-

-

300

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2

-

2.0

-

-

2.0

-

-

600

750

-

-

6

-

-

-

0.8

TBD

TBD

45

350

TBD

TBD

45

350

-

-

MSK 4322

Min. Typ. Max. UNITS

OUTPUT CHARACTERISTICS

Reverse Recovery Time 1

BIAS SUPPLY CHARACTERISTICS

INPUT SIGNAL CHARACTERISTICS

Positive Trigger Threshold Voltage

Negative Trigger Threshold Voltage

SWITCHING CHARACTERISTICS

Upper Drive:

Turn-On Propagation Delay

Turn-Off Propagation Delay

Turn-On

Turn-Off

Lower Drive:

Turn-On Propagation Delay

Turn-Off Propagation Delay

Turn-On

Turn-Off

Dead Time

1

Minimum Pulse Width

1

1

2

3

1

2

3

-

1

2

3

1

2

3

1,2,3

1,2,3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2

-

V

V

V

V

V

V

nS

µA

mA

µA

mA

mA

mA

V

V

nS

nS

nS

nS

nS

nS

nS

nS

µS

nS

3

2

Test Conditions

NOTES:

VDS(ON) (Each Transistor)

Instantaneous Forward Voltage

(Intrinsic Diode)

Leakage Current

Quiescent Bias Current

(non-switching)

1

-65° to +150°C

300°C

-40°C to +85°C

-55°C to +125°C

+175°C

TsT

TLD

TC

TJ