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APM3095P датащи(PDF) 2 Page - Anpec Electronics Coropration

номер детали APM3095P
подробное описание детали  P-Channel Enhancement Mode MOSFET
PDF  9 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM3095P датащи(HTML) 2 Page - Anpec Electronics Coropration

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Copyright
 ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
www.anpec.com.tw
2
APM3095P
Notes
a : Pulse test ; pulse width
≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Absolute Maximum Ratings Cont. (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
T
A=25°C
50
P
D
Maximum Power Dissipation
T
A=100°C
20
W
T
J
Maximum Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to 150
°C
RθjA
Thermal Resistance – Junction to Ambient
50
°C/W
APM3095P
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS=0V , IDS=-250µA
-30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS=-24V , VGS=0V
-1
µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS , IDS=-250µA
-1
-1.5
-2
V
I
GSS
Gate Leakage Current
V
GS=±25V , VDS=0V
±100
nA
V
GS=-10V , IDS=-6A
95
110
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS=-4.5V , IDS=-3A
140
160
m
Ω
V
SD
a
Diode Forward Voltage
I
SD=-1.25A , VGS=0V
-0.7
-1.3
V
Dynamic
b
Q
g
Total Gate Charge
813
Q
gs
Gate-Source Charge
1.9
Q
gd
Gate-Drain Charge
V
DS=-15V , IDS=-3A
V
GS=-10V
1.1
nC
t
d(ON)
Turn-on Delay Time
10
20
T
r
Turn-on Rise Time
820
t
d(OFF)
Turn-off Delay Time
25
50
T
f
Turn-off Fall Time
V
DD=-15V , IDS=-1A ,
V
GEN=-10V , RG=6Ω
R
L=15Ω
515
ns
C
iss
Input Capacitance
550
C
oss
Output Capacitance
120
C
rss
Reverse Transfer Capacitance
V
GS=0V
V
DS=-25V
Frequency=1.0MHz
75
pF
Electrical Characteristics (T
A = 25°C unless otherwise noted)



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