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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMF60R360P датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MMF60R360P датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor MMF60R360P · FEATURES · With TO-220F packaging · High speed switching · Low gate input resistance · Standard level gate drive · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 33 A PD Total Dissipation 31 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 4.0 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
Аналогичный номер детали - MMF60R360P |
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Аналогичное описание - MMF60R360P |
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ссылки URL |
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