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DTC143Z датащи(PDF) 1 Page - First Silicon Co., Ltd |
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DTC143Z датащи(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. • Simplifies Circuit Design • Reduces Board Space and Component Count Bias Resistor Transistor SEMICONDUCTOR TECHNICAL DATA DTC143Z IN GND OUT GND OUT R2 R1 IN 1 3 2 1 2 3 TO-92M DIM MILLIMETERS A B C D E F G 3.25 MAX 4.20 MAX 0.48 MAX 1.52 0.1 1.27 15.30 0.20 0.76 45 0.51 MAX H J E E H J C K 0.25 K B + _ + _ 1. EMITTER(GND) 2. COLLECTOR(Output) 3. BASE(Input) Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Input voltage VI(off) 0.5 V VCC=5V ,IO=100 μA VI(on) 1.3 VO=0.3V ,IO=5 mA Output voltage VO(on) 0.1 0.3 V IO/II=5mA/0.25mA Input current II 1.8 mA VI=5V Output current IO(off) 0.5 μA VCC=50V ,VI=0 DC current gain GI 80 VO=5V ,IO=10mA Input resistance R1 3.29 4.7 6.11 K Ω Resistance ratio R2/R1 8 10 12 Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz Absolute maximum ratings(Ta=25 ℃) Parameter Symbol Unit Supply voltage VCC V 0 5 Input voltage VIN -5~30 V Output current IO 0 0 1 mA IC(MAX) 0 0 1 Power dissipation Pd 300 mW Junction temperature 0 5 1 j T ℃ Storage temperature 0 5 1 ~ 5 5 - g t s T ℃ Value 2010. 7. 22 1/2 Revision No : 0 |
Аналогичный номер детали - DTC143Z |
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Аналогичное описание - DTC143Z |
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