40P03 datasheet(2/4 Pages) KEXIN

номер детали	40P03

подробное описание детали	P-Channel Enhancement MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

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SMD Type

MOSFET

DIP Type

40P03

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

VDS=-30V, VGS=0V

-1

VDS=-24V, VGS=0V, TJ=150℃

-25

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

±100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-1

-3

VGS=-10V, ID =-18A

VGS=-4.5V, ID=-10A

Forward Transconductance

gFS

VDS=-10V, ID=-18A

Input Capacitance

Ciss

915

1465

Output Capacitance

Coss

280

Reverse Transfer Capacitance

C rss

195

Total Gate Charge

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode R everse Recovery Time

trr

IS=-18A, dI/dt=-100A/μs

Body Diode R everse Recovery Charge

Qrr

IS=-18A, dI/dt=-100A/μs

Diode Forward Voltage

VSD

IS=-18A,VGS=0V

-1.2

Zero Gate Voltage Drain Current

IDSS

μA

mΩ

VGS=-10V, VDS=-15V, RD =0.8Ω,

RG=3.3Ω， ID=-18A

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-25V, f=1MHz

VGS=-4.5V, VDS=-24V, ID=-18A

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