SSM3K44FS datasheet(2/5 Pages) TOSHIBA

номер детали	SSM3K44FS

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

PDF	5 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3K44FS

2014-03-01

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±14 V, VDS = 0 V

⎯

±1

μA

Drain-Source breakdown voltage

V (BR) DSS

ID = 0.1 mA, VGS = 0 V

⎯

Drain Cut-off current

IDSS

VDS = 30 V, VGS = 0 V

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.8

⎯

1.5

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 10 mA

⎯

ID = 10 mA, VGS = 4 V

⎯

2.2

4.0

Drain-Source ON resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

4.0

7.0

Input capacitance

Ciss

⎯

8.5

⎯

Reverse transfer capacitance

Crss

⎯

5.3

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0 V, f = 1 MHz

⎯

9.4

⎯

Turn-on time

ton

⎯

Switching time

Turn-off time

toff

VDD = 5 V, ID = 10 mA,

VGS = 0 to 5 V

⎯

200

⎯

Switching Time Test Circuit

(a) Test circuit

(b) VIN

Precaution

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (0.1mA for the

SSM3K44FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device

VDD = 5 V

Duty

≤ 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common source

Ta = 25°C

VDD

OUT

5 V

μs

ton

90%

10%

0 V

5 V

10%

90%

toff

VDD

VDS (ON)

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