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SSM3K35FS датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали SSM3K35FS
подробное описание детали  TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K35FS датащи(HTML) 2 Page - Toshiba Semiconductor

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SSM3K35FS
2014-03-01
2
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
Marking
Equivalent Circuit (top view)
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM3K35FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
VDD = 3 V
Duty
≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
OUT
IN
2.5 V
0
10
μs
RL
(c) VOUT
ton
90%
10%
0 V
2.5 V
10%
90%
toff
tr
tf
VDD
VDS (ON)
KZ
1
2
3
1
2
3



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