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SSM3K35AMFV датащи(PDF) 4 Page - Toshiba Semiconductor

номер детали SSM3K35AMFV
подробное описание детали  MOSFETs Silicon N-Channel MOS
PDF  9 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K35AMFV датащи(HTML) 4 Page - Toshiba Semiconductor

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SSM3K35AMFV
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD = 10 V, ID = 200 mA,
VGS = 4.5 V
Min
Typ.
0.34
0.09
0.16
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Diode forward voltage
(Note 1)
Symbol
VDSF
Test Condition
ID = -150 mA, VGS = 0 V
Min
Typ.
-0.8
Max
-1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2017-02-17
Rev.3.0
©2016 Toshiba Corporation



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