BUL147 BUL147F

3–2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.2 Adc)

Base–Emitter Saturation Voltage

(IC = 4.5 Adc, IB = 0.9 Adc)

VBE(sat)

—

—

0.82

0.92

1.1

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.2 Adc)

(TC = 125°C)

(IC = 4.5 Adc, IB = 0.9 Adc)

(TC = 125°C)

VCE(sat)

—

—

—

—

0.25

0.3

0.35

0.35

0.5

0.5

0.7

0.8

Vdc

DC Current Gain

(IC = 1.0 Adc, VCE = 5.0 Vdc)

(TC = 125°C)

DC Current Gain

(IC = 4.5 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

DC Current Gain

(IC = 2.0 Adc, VCE = 1.0 Vdc)

(TC = 25°C to 125°C)

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

14

—

8.0

7.0

10

10

—

30

12

11

18

20

34

—

—

—

—

—

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

14

—

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

100

175

pF

Input Capacitance (VEB = 8.0 V)

Cib

—

1750

2500

pF

Dynamic Saturation Voltage:

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

(IC = 2.0 Adc

IB1 = 200 mAdc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE(dsat)

—

—

3.0

5.5

—

—

Volts

Dynamic Saturation Voltage:

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

IB1 = 200 mAdc

VCC = 300 V)

3.0

µs

(TC = 125°C)

VCE(dsat)

—

—

0.8

1.4

—

—

Volts

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

(IC = 5.0 Adc

IB1 = 0.9 Adc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE(dsat)

—

—

3.3

8.5

—

—

Volts

(see Figure 18)

IB1 = 0.9 Adc

VCC = 300 V)

3.0

µs

(TC = 125°C)

—

—

0.4

1.0

—

—

SWITCHING CHARACTERISTICS: Resistive Load (D.C.

≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(IC = 2.0 Adc, IB1 = 0.2 Adc

IB2 = 1.0 Adc, VCC = 300 V)

(TC = 125°C)

ton

—

—

200

190

350

—

ns

Turn–Off Time

(TC = 125°C)

toff

—

—

1.0

1.6

2.5

—

µs

Turn–On Time

(IC = 4.5 Adc, IB1 = 0.9 Adc

IB1 = 2.25 Adc, VCC = 300 V)

(TC = 125°C)

ton

—

—

85

100

150

—

ns

Turn–Off Time

(TC = 125°C)

toff

—

—

1.5

2.0

2.5

—

µs

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

(IC = 2.0 Adc, IB1 = 0.2 Adc

IB2 = 1.0 Adc)

(TC = 125°C)

tfi

—

—

100

120

180

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

1.3

1.9

2.5

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

210

230

350

—

ns

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc

IB2 = 2.25 Adc)

(TC = 125°C)

tfi

—

—

80

100

150

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

1.6

2.1

3.2

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

170

200

300

—

ns

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc

IB2 = 0.9 Adc)

(TC = 125°C)

tfi

60

—

—

150

180

—

ns

Storage Time

(TC = 125°C)

tsi

2.6

—

—

4.3

3.8

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

200

330

350

—

ns