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LM3502 датащи(PDF) 16 Page - National Semiconductor (TI) |
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LM3502 датащи(HTML) 16 Page - National Semiconductor (TI) |
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16 / 18 page ![]() Application Information (Continued) Taiyo Yuden GMK212BJ105MD (0805/35V) www.t-yuden.com muRata GRM40-035X7R105K (0805/50V) www.murata.com TDK C3216X7R1H105KT (1206/50V) www.tdktca.com C3216X7R1C475K (1206/16V) AVX 08053D105MAT (0805/25V) www.avxcorp.com 08056D475KAT (0805/6.3V) 1206ZD475MAT (1206/10V) DIODE SELECTION To maintain high efficiency it is recommended that the aver- age current rating (I F or IO) of the selected diode should be larger than the peak inductor current (I Lpeak). At the mini- mum, the average current rating of the diode should be larger than the maximum LED current. To maintain diode integrity the peak repetitive forward current (I FRM) must be greater than or equal to the peak inductor current (I Lpeak). Diodes with low forward voltage ratings (V F) and low junction capacitance magnitudes (C J or CT or CD) are conducive to high efficiency. The chosen diode must have a reverse breakdown voltage rating (V R and/or VRRM) that is larger than the output voltage (V out). No matter what type of diode is chosen, Schottky or not, certain selection criteria must be followed: 1. V R and VRRM > VOUT 2. I F or IO ≥ I LOAD or IOUT 3. I FRM ≥ I Lpeak Some recommended diode manufacturers included but are not limited to: Vishay SS12(1A/20V) www.vishay.com SS14(1A/40V) SS16(1A/60V) On Semiconductor MBRM120E (1A/20V) www.onsemi.com MBRS1540T3 (1.5A/40V) MBR240LT (2A/40V) Central Semiconductor CMSH1- 40M (1A/40V) www.centralsemi.com SHUTDOWN AND START-UP On startup, the LM3502 contains special circuitry that limits the peak inductor current which prevents large current spikes from loading the battery or power supply. When Cntrl ≥ 1.4V and both the En1 and En2 signals are less than 0.3V, the LM3502 will enter a low I Q state and regulation will end. During this low I Q mode the output voltage is a diode drop below the supply voltage and the soft-start will be reset to limit the peak inductor current at the next startup. When both En1 and En2 are less than 0.3V, the P1 PMOS and N2 NMOS switches will turn off. When Cntrl < 0.3V for more than 12ms, typicaly, the LM3502 will shutdown and the output voltage will be a diode drop below the supply voltage. If the Cntrl pin is low for more than 12ms, the soft-start will reset to limit the peak inductor cur- rent at the next startup. When Cntrl is < 0.3 but for less than 12ms, typically, the device will not shutdown and reset the soft-start but shut off the NMOS N1 Power Device to allow for PWM contrl of the LED current. THERMAL SHUTDOWN The LM3502 stops regulating when the internal semiconduc- tor junction temperature reaches approximately 140˚C. The internal thermal shutdown has approximately 20˚C of hyster- esis which results in the LM3502 turning back on when the internal semiconductor junction temperature reaches 120˚C. When the thermal shutdown temperature is reached, the softstart is reset to prevent inrush current when the die temperature cools. UNDER VOLTAGE PROTECTION The LM3503 contains protection circuitry to prevent opera- tion for low input supply voltages. When Vin drops below 2.3V, typically the LM3502 will no longer regulate. In this mode, the output volage will be one diode drop below Vin and the softstart will be reset. When Vin increases above 2.4V, typically, the device will begin regulating again. OVER VOLTAGE PROTECTION The LM3502 contains dedicated circuitry for monitoring the output voltage. In the event that the LED network is discon- nected from the LM3502, the output voltage will increase and be limited to 15.5V(typ.) for the 16V version , 24V(typ.) for the 25V version, 34V(typ.) for the 35V version and 42V(typ.) for the 44V version (see eletrical table for more details). In the event that the network is reconnected, regu- lation will resume at the appropriate output voltage. LAYOUT CONSIDERATIONS All components, except for the white LEDs, must be placed as close as possible to the LM3502. The die attach pad (DAP) must be soldered to the ground plane. The input bypass capacitor C IN, as shown in Figure 1, must be placed close to the IC and connect between the V IN and PGND pins. This will reduce copper trace resistance which effects input voltage ripple of the IC. For additional input voltage filtering, a 100nF bypass capacitor can be placed in parallel with C IN to shunt any high frequency noise to ground. The output capacitor, C OUT, must be placed close to the IC and be connected between the V OUT1 and PGND pins. Any copper trace connections for the C OUT capacitor can increase the series resistance, which directly effects output voltage ripple and efficiency. The current setting re- sistor, R1, should be kept close to the Fb pin to minimize copper trace connections that can inject noise into the sys- tem. The ground connection for the current setting resistor network should connect directly to the PGND pin. The AGND pin should be tied directly to the PGND pin. Trace connec- tions made to the inductor should be minimized to reduce power dissipation and increase overall efficiency while re- ducing EMI radiation. For more details regarding layout guidelines for switching regulators, refer to Applications Note AN-1149. www.national.com 16 |
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