APM9968C datasheet(2/10 Pages) ANPEC

2 / 10 page

 ANPEC Electronics Corp.

Rev. A.1 - Jul., 2003

www.anpec.com.tw

APM9968C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

DSS

Drain-Source Breakdown

Voltage

GS=0V , IDS=250µA

DSS

Zero Gate Voltage Drain

Current

DS=16V , VGS=0V

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=250µA

0.6

0.7

IGSS

Gate Leakage Current

VGS=±8V , VDS=0V

±10

µA

VGS=4.5V , IDS=6A

RDS(ON)

Drain-Source On-state

Resistance

VGS=2.5V , IDS=5.2A

Ω

VSD

Diode Forward Voltage

ISD=0.5A , VGS=0V

0.7

1.3

Dynamic

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=10V , IDS= 6A

VGS=4.5V ,

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

100

182

Turn-off Fall Time

VDD=10V , IDS=6A ,

VGEN=4.5V , RG=6Ω

100

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

DSS

Drain-Source Voltage

GSS

Gate-Source Voltage

±8

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

A=25°C

Maximum Power Dissipation

A=100°C

0.4

Maximum Junction Temperature

150

°C

STG

Storage Temperature Range

-55 to 150

°C

RθJA*

Thermal Resistance – Junction to Ambient

°C/W

* Surface Mounted on FR4 Board, t

≤ 10 sec.

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