2SB647 datasheet(4/8 Pages) RENESAS

4 / 8 page

2SB647, 2SB647A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SB647

2SB647A

Unit

Collector to base voltage

CBO

–120

Collector to emitter voltage

CEO

–80

–100

Emitter to base voltage

EBO

–5

Collector current

–1

Collector peak current

C(peak)

–2

Collector power dissipation

0.9

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SB647

2SB647A

Item

Symbol Min

Typ

Max

Min

Typ

Max Unit

Test conditions

Collector to base

breakdown voltage

(BR)CBO

–120 —

—

–120 —

—

C = –10 µA, IE = 0

Collector to emitter

breakdown voltage

(BR)CEO

–80

—

–100 —

—

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

–5

—

–5

—

E = –10 µA, IC = 0

Collector cutoff current

CBO

—

–10

—

–10

µAV

CB = –100 V, IE = 0

DC current transfer ratio

FE1*

—

320

—

200

CE = –5 V,

C = –150 mA*

FE2

—

CE = –5 V,

C = –500 mA*

Collector to emitter

saturation voltage

CE(sat)

—

–1

—

–1

C = –500 mA,

B = –50 mA*

Base to emitter voltage

—

–1.5

—

–1.5 V

CE = –5 V,

C = –150 mA*

Gain bandwidth product

—

140

—

140

—

MHz V

CE = –5 V, IC = –150 mA

Collector output capacitance Cob

—

CB = –10 V, IE = 0

f = 1 MHz

Notes: 1. The 2SB647 and 2SB647A are grouped by h

FE1 as follows.

2. Pulse test

2SB647

60 to 120

100 to 200

160 to 320

2SB647A

60 to 120

100 to 200

—

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