© 1999 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FSB749 Rev. 1.1.0

1

January 2014

FSB749

PNP Low Saturation Transistor

Ordering Information

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty cycle operations.

Part Number

Top Mark

Package

Packing Method

FSB749

749

SSOT 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

-25

V

Collector-Base Voltage

-35

V

Emitter-Base Voltage

-5

V

Collector Current - Continuous

-3

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

B

E

C

Description

These devices are designed with high-current gain and

low saturation voltage with collector currents up to 3 A

continuous. Sourced from process PC.