FSB619 datasheet(3/7 Pages) ONSEMI

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FSB619 Rev. 2.2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width

≤ 300 µs, duty cycle ≤ 2.0%

Symbol

Parameter

Max.

Unit

Total Device Dissipation(3)

500

Derate Above 25°C

mW/°C

RθJA

Thermal Resistance, Junction-to-Ambient

250

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0

BVCBO

Collector-Base Breakdown Voltage

IC = 100 µA, IE = 0

BVEBO

Emitter-Base Breakdown Voltage

IE = 100 µA, IC = 0

ICBO

Collector Cut-Off Current

VCB = 40 V, IE = 0

100

IEBO

Emitter Cut-Off Current

VEB = 4 V, IC = 0

100

ICES

Collector Emitter Cut-Off Current

VCES = 40 V

100

hFE

DC Current Gain(4)

IC = 10 mA, VCE = 2 V

200

IC = 200 mA, VCE = 2 V

300

IC = 1 A, VCE = 2 V

200

IC = 2 A, VCE = 2 V

100

VCE(sat)

Collector-Emitter Saturation

Voltage(4)

IC = 100 mA, IB = 10 mA

IC = 1 A, IB = 10 mA

235

IC = 2 A, IB = 50 mA

320

VBE(sat)

Base-Emitter Saturation Voltage(4)

IC = 2 A, IB = 50 mA

VBE(on)

Base-Emitter On Voltage(4)

IC = 2 A, VCE = 2 V

Cobo

Output Capacitance

VCB = 10 V, IE = 0, f = 1 MHz

Transition Frequency

IC = 50 mA, VCE = 10 V,

f = 100 MHz

100

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