Publication Order Number:

FSB560A/D

© 2001

Semiconductor Components Industries, LLC.

December-2017, Rev. 2

FSB560 / FSB560A

NPN Low-Saturation Transistor

Features

• These devices are designed with high-current gain and low-saturation

voltage with collector currents up to 2 A continuous.

Ordering Information

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty-cycle operations.

Part Number

Marking

Package

Packing Method

FSB560

560

SSOT 3L

Tape and Reel

FSB560A

560A

SSOT 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

60

V

Collector-Base Voltage

80

V

Emitter-Base Voltage

5

V

Collector Current - Continuous

2

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

B

E

C