FMBM5551 datasheet(2/6 Pages) ONSEMI

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Thermal Characteristics(1), (2)

Values are at TA = 25°C unless otherwise noted.

Notes:

1. PD total, for both transistors. For each transistor, PD = 350 mW.

2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

Power Dissipation (TC = 25°C)

0.7

Derate Above 25

°C5.6

mW/

°C

RθJA

Thermal Resistance, Junction-to-Ambient

180

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage

IC = 1 mA, IB = 0

160

BVCBO

Collector-Base Breakdown Voltage

IC = 100 μA, IE = 0

180

BVEBO

Emitter-Base Breakdown Voltage

IE = 10 μA, IC = 0

ICBO

Collector Cut-Off Current

VCB = 120 V, IE = 0

VCB = 120 V, IE = 0, TA = 100°C

μA

IEBO

Emitter Cut-Off Current

VEB = 4 V, IC = 0

hFE1

DC Current Gain

VCE = 5 V, IC = 1 mA

DIVID1

Variation Ratio of hFE1

Between Die 1 and Die 2

hFE1(Die1) / hFE1(Die2)

0.9

1.1

hFE2

DC Current Gain

VCE = 5 V, IC = 10 mA

250

DIVID2

Variation Ratio of hFE2

Between Die 1 and Die 2

hFE2(Die1) / hFE2(Die2)

0.95

1.05

hFE3

DC Current Gain

VCE = 5 V, IC = 50 mA

DIVID3

Variation Ratio of hFE3

Between Die 1 and Die 2

hFE3(Die1) / hFE3(Die2)

0.9

1.1

VCE(sat) Collector-Emitter Saturation Voltage

IC = 10 mA, IB = 1 mA

0.15

IC = 50 mA, IB = 5 mA

0.20

VBE(sat)

Base-Emitter Saturation Voltage

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VBE(on)

Base-Emitter On Voltage

VCE = 5 V, IC = 10 mA

DEL

Difference of VBE(on)

Between Die1 and Die 2

VBE(on)(Die1) - VBE(on)(Die2)

-8

Cob

Output Capacitance

VCB = 10 V, IE = 0, f = 1 MHz

Cib

Input Capacitance

VEB = 0.5 V, IC = 0, f = 1 MHz

Current Gain Bandwidth Product

VCE = 10 V, IC = 10 mA,

f = 100 MHz

100

300

MHz

Noise Figure

VCE = 5 V, IC = 200 μA,

f = 1 MHz, RS = 20 kΩ,

B = 200 Hz

8dB

hfe

Small Signal Current Gain

VCE = 10 V, IC = 1.0 mA,

f = 10 kHz

250

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