FMBM5401 datasheet(2/6 Pages) ONSEMI

2 / 6 page

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Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: Pulse width

≤ 300 ms, duty cycle ≤ 2%

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IB = 0

-150

BVCBO

Collector-Base Breakdown Voltage

IC = -100 μA, IE = 0

-160

BVEBO

Emitter-Base Breakdown Voltage

IE = -10 μA, IC = 0

-5.0

ICBO

Collector Cut-Off Current

VCB = -120 V, IE = 0

-50

VCB = -120 V, IE = 0, TA = 100°C

-50

μA

IEBO

Emitter Cut-Off Current

VEB = -3.0 V, IC = 0

-50

hFE1

DC Current Gain(4)

VCE = -5 V, IC = -1 mA

DIVID1

Variation Ratio of hFE1

Between Die 1 and Die 2

hFE1(Die1) / hFE1(Die2)

0.9

1.1

hFE2

DC Current Gain(4)

VCE = -5 V, IC = -10 mA

240

DIVID2

Variation Ratio of hFE2

Between Die 1 and Die 2

hFE2(Die1) / hFE2(Die2)

0.95

1.05

hFE3

DC Current Gain(4)

VCE = -5 V, IC = -50 mA

DIVID3

Variation Ratio of hFE3

Between Die 1 and Die 2

hFE3(Die1) / hFE3(Die2)

0.9

1.1

VCE(sat) Collector-Emitter Saturation Voltage

(4)

IC = -10 mA, IB = -1 mA

-0.2

IC = -50 mA, IB = -5 mA

-0.5

VBE(sat) Base-Emitter Saturation Voltage

(4)

IC = -10 mA, IB = -1 mA

-1

IC = -50 mA, IB = -5 mA

-1

VBE(on) Base-Emitter On Voltage

(4)

VCE = -5 V, IC = -10 mA

-1

DEL

Difference of VBE(on)

Between Die1 and Die 2

VBE(on)(Die1) - VBE(on)(Die2)

-8

Current Gain Bandwidth Product

VCE = -10 V, IC = -10 mA,

f = 100 MHz

100

300

MHz

Cob

Output Capacitance

VCB = -10 V, IE = 0, f = 1 MHz

6.0

Noise Figure

VCE = -5.0 V, IC = -250 μA,

RS = 1.0 kΩ,

f = 10 Hz to 15.7 kHz

8.0

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