IXTT52N30P

IXTQ52N30P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

20

30

S

C

iss

3490

pF

C

oss

V

550

pF

C

rss

130

pF

t

d(on)

24

ns

t

r

22

ns

t

d(off)

60

ns

t

f

20

ns

Q

g(on)

110

nC

Q

gs

V

25

nC

Q

gd

53

nC

R

thJC

0.31

C/W

R

thCS

TO-3P

0.25

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

52

A

I

SM

Repetitive, Pulse Width Limited by T

JM

150

A

V

SD

I

1.5

V

t

rr

250

ns

Q

RM

3.0

μC

I

V

Resistive Switching Times

V

R

TO-3P Outline

1 - GATE

2,4 - DRAIN

3 - SOURCE

TO-268 Outline

1 - GATE

2,4 - DRAIN

3 - SOURCE