IXTP14N60P datasheet(1/6 Pages) IXYS

номер детали	IXTP14N60P

подробное описание детали	Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

600

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

600

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C14

A

I

DM

T

C = 25C, pulse width limited by TJM

42

A

I

A

T

C = 25C

14

A

E

AS

T

C = 25C

900

mJ

P

D

T

C = 25C

300

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting torque (TO-220 &TO-3P)

1.13/10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-3P

5.5

g

DS99329G(10/15)

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

600

V

GS(th)

V

DS = VGS, ID = 250A

3.0

5.5 V

I

GSS

V

GS =  30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

5

A

T

J = 125C

100 μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

450 550 m



PolarTM

Power MOSFET

Enhancement Mode

Avalanche Rated

IXTA14N60P

IXTP14N60P

IXTQ14N60P

V

DSS

=

600V

I

D25

=

14A

R

DS(on) 



550m



Features



International Standard Packages



Fast Intrinsic Rectifier



Avalanche Rated



Low R

DS(ON) and QG



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-3P (IXTQ)

D

G

S

G D

S

TO-220AB (IXTP)

D (Tab)

G

S

TO-263 AA (IXTA)

D (Tab)

Аналогичный номер детали - IXTP14N60P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTP14N60P	166Kb / 5P	PolarHVTM Power MOSFET
IXYS Corporation	IXTP14N60P	166Kb / 5P	P-Channel Enhancement Mode Avalanche Rated
Inchange Semiconductor ...	IXTP14N60P	295Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXTP14N60PM	122Kb / 5P	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Inchange Semiconductor ...	IXTP14N60PM	294Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - IXTP14N60P

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IXTP14N60P датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXTP14N60P

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