IXTP3N100P datasheet(1/7 Pages) IXYS

номер детали	IXTP3N100P

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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DS99767B(6/18)

IXTA3N100P

IXTP3N100P

IXTH3N100P

V

DSS

= 1000V

I

D25

= 3A

R

DS(on) 

 4.8



Features



International Standard Packages



Low R

DS(ON) and QG



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

4.5

V

I

GSS

V

GS = 20V, VDS = 0V

50 nA

I

DSS

V

DS = VDSS, VGS = 0V

5

A

T

J = 125C

250 μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

4.8



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1000

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1000

V

GSS

Continuous

20

V

GSM

Transient

30

V

I

D25

T

C = 25C3

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

6A

I

A

T

C = 25C3

A

E

AS

T

C = 25C

200

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

10

V/ns

P

D

T

C = 25C

125

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb

M

d

Mounting Torque (TO-220 & TO-247)

1.13 / 10

Nm/lb.in

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

G

S

D (Tab)

TO-220 (IXTP)

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXTH)

G

S

D (Tab)

D

TO-263 (IXTA)

N-Channel Enhancement Mode

Avalanche Rated

PolarTM

Power MOSFET

D (Tab)

S

G

D

Аналогичный номер детали - IXTP3N100P

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IXYS Corporation	IXTP3N100P	155Kb / 4P	Polar VHVTM Power MOSFET N-Channel Enhancement Mode

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Аналогичное описание - IXTP3N100P

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IXTP3N100P датащи(PDF) 1 Page - IXYS Corporation

IXTP3N100P датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTP3N100P

Аналогичное описание - IXTP3N100P

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