Small Signal MOSFET Bare Die ‐ 2N7002

 

 

PARAMETER

SYMBOL

VALUE

UNIT

 

Drain-to-Source Voltage

 

60

V

60

V

Gate-Source Voltage - Continuous

±20

V

 

Gate-Source Voltage – Non

Repetitive (tp < 50µs)

±40

 

Maximum Drain Current - Continuous

115

Maximum Drain Current - Pulsed

800

mA

200

 

mW

Maximum Power Dissipation

Derated above 25°C

2

1.6

mW/°C

Junction & Storage Temperature

-55 to 150

 

°C

THERMAL CHARACTERISTICS

Thermal Resistance,

 

Junction to Ambient

2

625

°C/W

 

 

Rev 1.0

02/26/18

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

 

OFF CHARACTERISTICS

 

Drain-Source Breakdown Voltage

60

 

 

 

 

 

 

 

 

 

 

-

-

V

-

-

1

µA

Zero Gate Voltage Drain Current

-

-

0.5

mA

Gate-Body Leakage, Forward

-

-

100

nA

Gate-Body Leakage, Reverse

-

-

-100

nA

Gate Threshold Voltage

1

2.1

2.5

V

-

1.2

7.5

-

1.7

13.5

Static Drain-Source On-Resistance

-

1.7

7.5

13.5

Ω

-

2.4

-

0.6

3.75

V

Drain-Source On-Voltage

-

0.09

1.5

V

On-State Drain Current

500

2700

-

mA

Forward Transconductance

80

320

-

mS

DYNAMIC CHARACTERISTICS

4

Input Capacitance

-

20

50

Output Capacitance

-

11

25

Reverse Transfer Capacitance

-

4

5

pF

Turn-On Time

-

-

20

Turn-Off Time

Page 2 of 4 

www.siliconsupplies.com

-

-

20

ns

1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may

reduce device reliability.

2. Power dissipation & thermal characterisation in SOT-23 package. Performance at die level dependent on assembly method and substrate choice.

3. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 4. Not production testing in die form, characterized by chip design & tested in package LAT.